Ultra low-loss, rugged SPT+ diode
Smooth switching SPT+ diode for good EMC
Industry standard package
High power density
AlSiC base-plate for high power cycling capability
AlN substrate for low thermal resistance
Improved high reliability package?
Recognized under UL1557, File E196689
Maximum rated values 1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse
voltage VRRM 4500 V
DC forward current IF 650 A
Peak forward current IFRM tp = 1ms 1300 A
Total power dissipation Ptot Tc = 25 °C, per diode 3350 W
Surge current IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 5300 A
Isolation voltage Visol 1 min, f = 50 Hz 10.2 kV
Junction temperature Tvj 125 °C
Junction operating temperature Tvj(op) -50 125 °C
Case temperature Tc -50 125 °C
Storage temperature Tstg -50 125 °C
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